| 摘要 |
PURPOSE:To obtain a positive type photoresist of 2 layer structure high in sensitivity to light of the g-line (436nm) and high in resolution by incorporating a mixture of an alkali-soluble phenol resin and an o-naphthoquinone derivative. CONSTITUTION:The positive type photoresist of 2-layer structure is composed of the mixture of the alkali-soluble phenol resin represented by formula I or II, and the o-naphthoquinone derivative, thus permitting oxygen plasma resistance of the positive type photoresist to be enhanced by mixing the naphthoquinone diazide derivative as a sensitizing agent for giving light absorption sensitivity to the g-line (436nm) with the alkali-soluble phenol resin high in the content of silicone having oxygen plasma resistance. |
