| 摘要 |
PURPOSE:To uniform control the distribution of a processing speed inside a sample-processed plane with good reproducibility, by getting an electric field overlapped by a correcting magnetic field in correspondence with positions where a distribution of a speed of processing a sample by an ionized gas is uneven. CONSTITUTION:In case that evenness is deteriorated, a distribution of an etching speed fluctuates in a concentric circle-shaped form with the rotational axis of a rotational magnetic field element 6 serving as a center. Then, a luminous amount of plasma is monitored by a photo-detector 11 at respective points of an etched plane of a sample 8, and a mean value of time is computed by a microcomputer, so that the scattering in the distribution of the etching speed can be detected. A magnetic density is corrected in accordance with positions, where the scattering in its distribution occurs, by electrifying a specific oil in a means 4 for generating the correcting magnetic field. Resultantly the scattering in the distribution of the etching speed can be reduced.
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