| 摘要 |
PURPOSE:To prevent the thickness of multi-layer films from becoming insufficient on their edge plane by sing an easy method, by forming multi-layer films by changing a distance between a mask and a substrate or width of the mask every layer in selective deposition of a plasma CVD where the mask is used. CONSTITUTION:Patterning of a transparent conductive film ITO is performed on a transparent substrate 10 of glass or the like to form a lower electrode 11. When a distance between a mask 12 for CVD and the substrate 10 is set as d1, the first layer P-type amorphous silicon film 13 is formed by a plasma CVD method, and then after the mask distance is set as d2, the second layer I-type amorphous silicon film 14 is formed similarly. Finally, the upper electrode 15 is formed for completion. Thus, selection of d1<d2 enables the low resistance layer in the first layer P-type amorphous silicon film 13 to be completely cov ered with the creeping-in of the second layer I-type amorphous silicon film 14, to form a P-I diode of high quality without short circuit after the upper electrode 15 is formed.
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