Method of manufacturing semiconductor device.

摘要

A method of manufacturing a semiconductor device comprises the steps of forming a high-concentration impurity region (23) of the first conductivity type in a portion, serving as an inter-element isolation region, of a semiconductor substrate (21) of the first conductivity type and forming a high-concentration impurity region (22) of the second conductivity type in a portion serving as an element region in advance, growing a semiconductor layer (24) epitaxially on the semiconductor substrate (21) and at the same time forming high-concentration buried regions (22, 23) of the first and second conductivity types obtained by expansion of the high-concentration impurity regions of the first and second conductivity types during epitaxial growth of the semiconductor layer (24), forming a first groove (28), which reaches the high-concentration buried region (23) of the first conductivity type, for inter-element isolation and at the same time forming a second groove (29), which reaches the high-concentration buried region (22) of the second conductivity type, for intra-element isolation of a vertical bipolar transistor by selective anistropic etching of the semiconductor layer (24) of the second conductivity type, and forming inter-element and intra-element insulating isolation layers (31) by burying substantially insulated isolation material layers in the first and second grooves (28, 29).