| 摘要 |
<p>PURPOSE:To take out a large output voltage variation though a variation of threshold of a non-volatile memory is small, by driving an MOS transistor TR with the sourc side of the non-volatile memory. CONSTITUTION:A P type MOSTR11 is driven by a non-volatile memory 12 whose drain is set to an earth potential; and if a floating gate electrode of the memory 12 is not electrostatically charged with electrons, a prescribed source current is flowed through a power source voltage VDD, and a corresponding read voltage Vout is outputted. Meanwhile, if the floating gate electrode is electrostatically charged, the source current is hardly flowed, and the corresponding voltage Vout is generated. Consequently, a read output where the voltage is varied greatly in accordance with electrostatic charge or non-electrostatic charge of the floating electrode corresponding to stored contents is taken out though a variation of threshold of the non-volatile memory is small, and thus, a stable read of less variation of the output voltage is performed.</p> |
