| 摘要 |
PURPOSE:To prevent a semiconductor substrate from cracking due to a collapsed layer by forming a high density impurity region on the bonded portion of two semiconductor substrates, and forming a high density impurity region on an expose surface having a different conductivity type from that of the former region. CONSTITUTION:Two semiconductor substrates 20 are bonded on coating surfaces, and heat treated to obtain the integrally bonded state of the substrates 20 through a P-type oxide layer 21. At this time, high density impurity regions 22 of a conductivity type opposite to P-type are respectively formed in the substrates 20. Then, an N-type impurity diffusion source film 23 is formed on the exposed surface of the substrate 30, and heat-treated to form N- conductivity type impurity regions 24 in the substrates 20. Then, the substrates 20 are separated, and the film 23 and the layer 21 are removed. Thus, a mechanical polishing treatment can be entirely eliminated to prevent a collapsed layer from forming in the substrates 20.
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