| 摘要 |
PURPOSE:To prevent a parasitic thyristor from being turned ON and reaching latch-up and avoid breakdown of a semiconductor device by providing a voltage level detector, a voltage generator, an internal circuit and a delay circuit. CONSTITUTION:A voltage level detector 1 which detects the level of the voltage supplied from a voltage supply source, a voltage generator 3 which supplies a voltage to a semiconductor substrate so as to set the semiconductor substrate at the predetermined potential, an internal circuit which is operated by an internal source voltage and a delay circuit 2 which is controlled to operate by the voltage level detector which detects the voltage of the voltage supply source when it reaches a certain voltage level and delays the supply of the internal source voltage from the voltage supply source to the internal circuit are provided. By lowering the substrate potential to the predetermined level before the voltage is supplied to the internal circuit, latch-up of a parasitic thyristor caused by the ascent of the substrate potential at the time of the source closing can be avoided.
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