Fabrication method of semiconductor device

摘要

A method of fabrication of a semiconductor device by forming a thin film pattern in the emitter region, forming a base lead-out electrode self-aligningly by using this thin film pattern, and also forming a fine graft base region and emitter region, and an oxide film for isolating the emitter region and base region, whereby the emitter diffusion layer and active base diffusion layer are formed in a shallow depth of diffusion by heat diffusion from the semiconductor film in which ions are implanted.