发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To decrease the voltage swing at operation and to attain low power consumption by providing respectively the 1st and 2nd voltage division means between the 1st power supply and the internal circuit and between the 2nd power supply and the internal circuit and using the power supply supplied by the 1st and 2nd voltage division means to driven the internal circuit. CONSTITUTION:Voltage division circuits A, B as the 1st and 2nd voltage division means to divide the 1st and 2nd power voltage are provided to the internal circuit II as each inverter common power supply. The voltage division circuits A, B are inserted to both high and low power supplies in the internal circuit to attain the drive of the internal circuit at the voltage VA lower than the power supply voltage VDD and at the voltage VS higher than the power voltage VSS, that is, in terms of the voltage swing. In this case, the threshold voltage to invert transistors is made equal to the input circuit and the output circuit. ince the voltage swing in the LSI is made small, the switching speed is increased and the low power consumption is attained because of the lowered voltage.
申请公布号 JPS62208715(A) 申请公布日期 1987.09.14
申请号 JP19860050539 申请日期 1986.03.10
申请人 FUJITSU LTD 发明人 ASAMI FUMITAKA
分类号 H03K17/04;H01L21/8234;H01L27/088;H03K17/687;H03K19/00;H03K19/017;H03K19/0948 主分类号 H03K17/04
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