| 摘要 |
PURPOSE:To obtain a recording member having excellent heat resistance and moisture resistance by providing a thin film consisting of at least Te, Ge and Bi. CONSTITUTION:The recording layer is constituted of the thin film consisting of the Te-Ge-Bi compsn. Since the bond of Te-Bi is immediately formed at the time of solidifying from the melt by addition of the Bi, the rate of crystallization is increased and a practicable rewriting type memory medium is realized. The amt. of the Bi to be added fixes the remaining excess Te bound with the Ge and therefore, the necessary concn. of the Bi is governed by the ratio of the Te/Ge and the adequate rate thereof is within the region enclosed by the points: point A1: (Te80Ge5Bi15), point B1: (Te55Ge5Bi40), point C1: (Te45Ge15 Bi40), point D1: (Te45Ge40Bi15), and point E1: (Te57Ge40Bi3). The medium having the excellent thermal stability of a recording signal is thus obtd. without considerably deteriorating the recording sensitivity by laser light, etc. |
