| 摘要 |
PURPOSE:To miniaturize the device and to obtain the titled III-V compd. single crystal having a highly uniform dislocation density by successively increasing the temp. at the boundary part between the high-temp. region and the low-temp. region in a furnace as the relative position between the furnace and a boat is moved. CONSTITUTION:The relative position between the furnace provided with a temp. gradient on the inside and the boat for growing a crystal is moved from the high-temp. side to the low-temp. side to produce the III-V compd. single crystal. At this time, the temp. at the boundary part from the high-temp. region to the low-temp. region is successively increased in accordance with a temp. programmer as the crystal growth proceeds. Under such conditions, a crystal is grown while maintaining the temp. at the barrier part between the high-temp. side contg. the boat and the low-temp. side contg. a group V element at more than a specified temp. In this case, the high-temp. side is kept at a temp. higher than the m.p. of the III-V compd. The low-temp. side is kept at a temp. necessary to maintain the inside of a cylinder wherein the boat is placed at about 1atm. The specified temp. is controlled to a temp. lower than the m.p. and higher than the low-temp. side and at which the dislocation density is minimized.
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