| 摘要 |
PURPOSE:To enable the depth of a recession to be formed to be controlled with high precision as well as to be monitored in line without destruction by a method wherein a processing surface is previously ion-implanted with an element distinctive from the substrate element. CONSTITUTION:A silicon substrate 1 is ion-implanted with a silicon isotope <so>Si in a depth corresponding to the depth d of a recess 3 to be formed. This specimen is etched with plasma to form the recess 3. When an etched element is detected by a mass analyzer simultaneously with the etching process, the signal levels for etching time of <so>Si represent the changes in time. The changes in time corresponding to the profile A in silicon of <so>Si, the depth of recession during etching process can be known in real time by checking the signal levels. Resultantly, a specified depth (d) of recess can be controlled by stopping the etching process as soon as the signals reach the point P level.
|
