| 摘要 |
PURPOSE:To simply obtain a high purity thin film of a group VIII metal by feeding an organometallic compound satisfying prescribed conditions as starting material to a part near a substrate heated to a prescribed temp. and by applying heat, plasma or light. CONSTITUTION:A solid organometallic compound contg. one or more kinds of group VIII metals and one or more kinds of 1-4C ligands, e.g., tris(acetylacetonato)rhodium, bis(acetylacetonato)palladium or bis-(cyclopentadienyl) palladium is prepd. The compound is vaporized at <=300 deg.C under <=10<-1>Torr pressure and one or more among heat, plasma and light are applied to the resulting vapor to form a thin metallic film on the surface of a substrate heated to <=300 deg.C.
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