| 摘要 |
PURPOSE:To completely peel off a resist formed of a denatured layer thereon using ion implanted mask without doing damage to a substrate making use of plasma by a method wherein plasma processing is performed using reactive gas such as O2 etc. while cooling down the substrate. CONSTITUTION:For example, phosphorus ion (P<+>) of a dosage 3X10<15>cm<-2> is implanted with accelerating energy of 120KeV so that a substrate 9 coated with resist 1.3mum thick formed of a denatured layer thereon may be fixed on cooling susceptors 4 cooled down by cooling water fed from a cooling water supply pipe 3a (serving both as a strut). Next, oxygen (O2) is fed from a reaction gas leading-in port 5 to a reaction vessel 1 at the flow rate of around 500cc/min to be exhausted from an exhaust port 6 to reduce the pressure in the reaction vessel 1 down to around 1Torr and then high frequency electrodes 7a, 7b are impressed with high frequency power of around 13.56MHz, 1.5KW to produce oxygen plasma in the reaction vessel 1 for peeling off the resist on the substrate 9 to be processed for 3-5min. Through these procedures, the resist layer on the substrate to be processed can be completely peeled off leaving no denatured layer at all.
|
