| 摘要 |
PURPOSE:To obtain an etching soln. for indium aluminum arsenide enabling satisfactory control on the extent of etching and giving a mirror finished surface by preparing a mixed soln. consisting of an aqueous ammonia soln., an aqueous hydrogen peroxide soln. and water. CONSTITUTION:This etching soln. for indium aluminum arsenide is a mixed soln. consisting of an aqueous ammonia soln., an aqueous hydrogen peroxide soln. and water, and the extent of etching with the etching soln. can be controlled up to about several thousand Angstrom /min. Etching with the etching soln. is carried out by oxidation with the hydrogen peroxide soln. as an oxidizing agent and by the removal of the resulting oxide with the ammonia soln., and the water acts as a buffer. Accordingly, the rate of etching can easily be controlled by properly changing the ratio between the ammonia and hydrogen peroxide solns.
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