发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To permit mass-production of films to be formed on substrates by providing the plural substrates between a pair of targets, to which a voltage is impressed, in the direction intersecting orthogonally with the targets and moving the same in the orthogonal direction. CONSTITUTION:This sputtering device is formed of a pair of the targets 1, 1', a means 31 for disposing the plural substrates 30, 30' between the same, a means 34 for continuously transferring the substrates 30, 30' and a means for supplying electric energy for sputtering to the above-mentioned targets 1, 1'. The surfaces to be formed with films of the substrates 30, 30' are spaced from each other and the disposed in the same direction as the overlap lines of the targets 1, 1'.
申请公布号 JPS62207862(A) 申请公布日期 1987.09.12
申请号 JP19860051948 申请日期 1986.03.10
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SUZUKI KUNIO;KANEHANA MIKIO;FUKADA TAKESHI;ABE MASAYOSHI;SHIBATA KATSUHIKO;SHINOHARA HISATO;USUDA MASATO;YAMAZAKI SHUNPEI
分类号 H01L21/285;C23C14/34;C23C14/56;H01B13/00;H01L21/203;H01L21/31 主分类号 H01L21/285
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