| 摘要 |
PURPOSE:To permit memory with simple construction and to make the memory hardly susceptible to electromagnetism by impressing a specific voltage to a viologen which exhibits liquid crystallinity to change the conductivity thereof and using the changed state thereof a memory state. CONSTITUTION:The conductivity of the viologen which exhibits the liquid crystallinity or the halide of the viologen (e.g.; the compd. expressed by the formula) changes when >=0.7V voltage is impressed thereto. The changed state is maintained for a long period of time even after the impression of the voltage is stopped. Such state is used as to memory state in a memory method. A memory element is formed if such viologen is injected between electrodes. The memory method which is simple in construction and is hardly susceptible to electromagnetism is obtd. according to the above-mentioned constitution. The memory element having the simple construction is obtd. |
