| 摘要 |
An electroplating cell having a cathode assembly which is vertically mounted and which holds a plurality of wafers to be plated, and an anode which is vertically mounted adjacent to the cathode assembly. The anode and cathode are spaced apart and form opposite walls of a channel through which the plating bath flows. The plating bath is introduced through an isostatic chamber which produces, at its output, a substantially equal flow across the width of the channel so that a substantially vertical laminar flow is produced through the channel and the plated deposits are of uniform thickness within a wafer, from wafer to wafer and from batch to batch. |
