| 摘要 |
PURPOSE:To contrive the stabilization of laser oscillation efficiency by etching an SiO film which is to be a mask by use of a mixed solution of HF and NH4F so as to remove a hangover and forming a current constriction layer from the edge of said SiO2 film. CONSTITUTION:A substrate 1 subjected to mesa etching is etched by an etchant composed of a mixed solution of HF and NH4F of 1:10 by volumeric ratio so as to remove a hangover part like a pent roof projecting laterally from the upper part of a crystal layer 4 where an SiO2 film is formed into mesa form. Next, an SiO2 film 7 thus formed is used as a mask to form a block layer 5 consisting of P-type InP, after which a current construction layer 6 consisting of N-type InP is formed on said layer 5. As a result, a current introduced into an active layer 2 is inverted by an interface of a P-N junction between the current construction layer 6 and the block layer 5 and is confined in the active layer 2, thereby stabilizing an oscillation efficiency.
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