| 摘要 |
PURPOSE:To obtain a high-quality crystal growth layer of a III-V compd. semiconductor contg. Al with less incorporation of oxygen and carbon by forming the III-V compd. contg. Al while irradiating hydrogen plasma. CONSTITUTION:The molecular beam source 2 of Al having 99.99999% purity, the molecular beam source 3 of Ga having 99.9999% purity, the molecular beam source 4 of As having 99.99999% purity, and an H2 plasma generator 5 are firstly mounted in an ultrahigh-vacuum vessel 1. The plasma is formed by electron cyclotron resonance method, and irradiated on a substrate. The temp. of the substrate 7 consisting of GaAs is set at 600 deg.C, and a layer of the material shown by the formula is formed at 1mu/h growth velocity. Namely, the layer is firstly grown in 0.5mu thickness without irradiating hydrogen plasma, and then H2 is introduced by regulating a variable-leak valve 6 so that the H2 partial pressure in the ECR plasma generator is adjusted to 10<-4>mmHg, and the layer is further grown in 1mu thickness while irradiating hydrogen plasma.
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