| 摘要 |
PURPOSE:To prevent the generation of a crack in the Al wiring film on a gate electrode by forming a source region and a drain region by introducing an impurity atom using an anisotropically etched reflow film and the gate electrode as masks. CONSTITUTION:After a gate oxide film 12 is formed on a P-type Si substrate 11, a required pattern gate electrode 13 is formed on the oxide film 12 and a phospho-silicate glass film 14 used for the mask of introducing an impurity atom is formed on the substrate 11. Then, the substrate 11 is heat-treated in the atmosphere of an inactive gas and is made a reflow film 14A which has a gentle taper shape. Then, the substrate is anisotropically etched until the heat of the gate electrode 13 is exposed and the edges A at both the ends of the gate electrode 13 are also removed by etching. Then, the impurity atom is ion-implanted using the gate electrode 13A which is removed the edge A and the reflow film 14A as masks, the substrate is heat-treated and a source region 15 and a drain region 16 are formed. These can prevent the generation of a crack in the Al wiring film formed on the source region 15 and the drain region 16.
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