| 摘要 |
PURPOSE:To fine an element to a high degree by previously forming a gate electrode and shaping a capacitor and a contact hole through self-alignment. CONSTITUTION:An oxide film 102 for isolating an element is formed onto a P-type semiconductor substrate 101, and a gate oxide film 103 is shaped through a thermal oxidation method. The P-type semiconductor substrate 101 is etched by reactive ions, using a resist pattern 110, the oxide film 102 for isolating the element, a first nitride film 107 and a nitride-film side wall 109 as masks to form capacitor regions 111, and a capacitor electrode is shaped. A layer insulating oxide film 114 is formed through a chemical vapor phase growth method. The layer insulating oxide film 114 is etched, employing the resist pattern as a mask to form a contact hole, and Al for a wiring material is shaped through a sputtering method. Accordingly, the element can be fined to a high degree. |
