发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To improve the degree of integration without lowering the current supply capacity of a ground potential line by partially relocating the positional relationship of a wiring for applying constant potential arranged along the outer circumference of a semiconductor substrate. CONSTITUTION:Ground potential lines 5A, 5B connected to a pad 3B are extended normally along the outsides of pads 3. A supply potential line 4A connected to a pad 3A is extended along the insides of the pads 3. On the contrary, the positional relationship of supply potential lines 4 and ground potential lines 5 is varied partially. That is, ground potential lines 5B, 5C are shaped outside and inside the pads 3, and a supply potential line 4B is shaped outside the pads 3. An output circuit, in which currents hardly flow through the supply potential line 4B and extremely large currents flow through the ground potential lines 5B, 5C, such as an output circuit for directly driving a TTL and an LED is formed in the region 6B. Accordingly, the overall width of the ground potential line 5 (5B+5C) for the output circuit in the region 6B is broadened while the width of the supply potential line 4 (4B) is narrowed only by a broadened section.</p>
申请公布号 JPS62206851(A) 申请公布日期 1987.09.11
申请号 JP19860048312 申请日期 1986.03.07
申请人 HITACHI LTD 发明人 IWABUCHI MASARU
分类号 H01L21/3205;H01L23/52 主分类号 H01L21/3205
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