发明名称 Oscillator with low noise in the region of its oscillation frequency
摘要 The invention relates to an oscillator with low frequency modulation noise around its carrier frequency. In an oscillator operating by saturation of the current of an amplifier, the low-frequency noise inherent in the semiconductor amplifying device is converted into frequency modulation noise around the carrier. To reduce this FM noise, the oscillator according to the invention includes an amplifier 7 operating in the linear regime, and a negative feed-back loop in which a limiter 8 operates in the non-linear regime. The limiter 8 is linear and comprises two Schottky diodes 16, 17 mounted head-to-tail. A microband filter 11 and dielectric resonator 12, with high quality factor Q reduces the thermal noise of the amplifying transistor 7. Application to microwave frequency oscillators within the band from 1 to 60 GHz. <IMAGE>
申请公布号 FR2595518(A1) 申请公布日期 1987.09.11
申请号 FR19860003288 申请日期 1986.03.07
申请人 THOMSON CSF 发明人 NARGUISE MAMODALY, DOMINIQUE REFFET, ALAIN BERT ET JUAN OBREGON;REFFET DOMINIQUE;BERT ALAIN;OBREGON JUAN
分类号 H03B1/04;H03B5/18;(IPC1-7):H03B7/06;H03D3/00 主分类号 H03B1/04
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