| 摘要 |
PURPOSE:To determine the wiring size of a cell section precisely by arranging a pattern unrelated to the formation of an element around a pattern for measuring wiring size, reducing the difference of the wiring size of an element forming section and the size of the pattern for measurement and accurately monitoring wiring size. CONSTITUTION:When a wiring for a semiconductor device is shaped by using plasma etching, patterns 2 unrelated to the formation of an element are disposed around a pattern 1 for measuring wiring size. The difference of the wiring size of an element forming section and the size of the patterns for measuring wiring size is reduced. Accordingly, the wiring size of a cell section can be monitored precisely by the size of the patterns for measuring wiring size formed to sections except the cell section.
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