| 摘要 |
PURPOSE:To form a semiconductor device, defects in which are reduced and which has high quality, with high yield by high-temperature short-time lamp annealing the surface of a silicon substrate, oxygen concentration in which is kept within a specific range, and shaping a polycrystalline silicon layer on the back of the substrate. CONSTITUTION:A silicon substrate 1 having oxygen concentration of 1X 10<18>-2X10<18>pcs/cm<3> is annealed by means of infrared rays 3 from a halogen lamp, and a polycrystalline silicon layer 2 is shaped on the back of the sub strate. Consequently, a silicon wafer having few fine defects is acquired. The upper limit of oxygen concentration contained in the silicon substrate 1 is brought to 2X10<18>pcs/cm<3> because the upper limit of oxygen concentration in the silicon substrate 1 manufactured through a CZ method used for manufac turing a semiconductor device is decided to be 2X10<18>pcs/cm<3>. When the silicon substrate 1 is heated at a high temperature, a large number of slips are generat ed in a region having low oxygen concentration. Accordingly, the lower limit of oxygen concentration in the silicon substrate 1 is brought to 1X10<18>pcs/cm<3>.
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