| 摘要 |
PURPOSE:To form a resist film having no application nonuniformity and equal film thickness by deaerating a resist liquid, forming the nuclei of bubbles and previously removing a dissolved gas before applying the resist liquid. CONSTITUTION:One end side of a pipe 4 mounted to a cover 3 closing a resist liquid vessel 1 for deaeration is opened in a vapor phase section in the vessel 1, and the other end side is connected to a decompression source 5 such as a vacuum line. When the vapor phase section in the vessel 1 is decompressed as much as possible in an extent that a solution does not boil, dissolved gases in a resist liquid 2 are vaporized actively and the resist liquid is deaerated. Air is entrained by shaking the vessel 1 as shown in the arrow at that time, nuclei are easy to be shaped on the formation of bubbles, and the deaeration of the dissolved gases is promoted further. Consequently, the bubbling of the resist liquid 2 at a time when a wafer 15 is supplied with the resist liquid 2 can be prevented. Application nonuniformity is not generated on spin coating, thus acquiring a resist film having equal film thickness.
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