| 摘要 |
PURPOSE:To grow a single crystal uniformly extending over a large area by detecting reflected emitted particles or secondary emitted particles generated by beam scanning to a polycrystalline or amorphous semiconductor film and varying beam exposure per a unit area by the level of the detected signal. CONSTITUTION:Electron beams 8 emitted from an electron gun 2 are diaphragmed by an electromagnetic lens 3, and scans the upper section of a substrate to be treated 5 by a deflecting plate 4. Reflected electrons or secondary electrons corresponding to the recessed shape of the substrate to be treated 5 are generated by electron-beam irradiation to the substrate to be treated 5 at that time, but the reflected electrons or secondary electrons are detected by a detector 1, and the detected signal is transmitted over a signal detector 6. The signal detector 6 changes over a switch for the deflecting voltage of a deflection circuit 7 in order to alter the speed of electron beams 8 at desired time. Accordingly, the deflecting voltage of the deflecting plate 4 is changed and the speed of electron beams 8 is varied, and a proper quantity of beams corresponding to a signal level are irradiated, thus forming a uniform single crystal semiconductor film having a large area on an insulating film.
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