| 摘要 |
PURPOSE:To reduce contact resistance among a metallic layer in an opening section and upper and lower wiring layers, and to prevent an overetching to the lower-layer wiring layer or a semiconductor substrate when forming a side wall film by reacting the side wall film consisting of silicon and the like shaped to the side wall section of the opening section formed to an insulating film by the fluorine compound of a metal employed for burying the opening section. CONSTITUTION:Arsenic is implanted into a P-type silicon substrate 11, an N<+> diffusion layer wiring 12 is shaped through predetermined heat treatment, and an SiO2 film 14 is applied by using SiH4 and N2O at fixed pressure. An opening section is formed by employing a lithographic technique and a dry type etching technique, and a polycrystalline silicon film 15 is applied onto the whole surface of the substrate by using a decompression chemical vapor-phase deposition method. Polycrystalline silicon 15 is etched in an anisotropic manner through reactive ion etching employing a chlorine group gas such as BBr3-Cl2 to leave a side wall film 15a on the inner side wall of the opening section. Tungsten hexafluoride and argon are flowed at prescribed pressure and substrate temperature, and silicon in the side wall film 15a is replaced with a tungsten film 16. Tungsten hexafluoride is reduced, introducing hydrogen gas, and the tungsten film 16 is further grown.
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