| 摘要 |
PURPOSE:To enhance photoelectric conversion efficiency, by preventing disappearance of carriers, which are yielded by light having short wavelengths due to recombination, and taking out the carriers, which are yielded at the deep part of a low impurity concentration layer, to the outside effectively. CONSTITUTION:In the surface of a silicon substrate 10 comprising a low impurity concentration layer (i layer), a plurality of grooves are provided at an interval of about 50mum. Charge lead-out electrodes 13 (13a, 13b) comprising Al are formed in the grooves. An n<+> diffused layer 12 is formed at the side surface and the bottom surface part of the groove, in which the electrode 13a is formed. A p<+> diffused layer 14 is formed on the side surface and the bottom surface part of the groove, in which the electrode 13b is formed. A reflection preventing film 15 comprising an SiO film is formed on the surface. Light over a short wavelength to a long wavelength is efficiently inputted into the silicon substrate 10. Yielded carriers are located within 25mum from the charge lead-out electrodes 13. Therefore, the rates of recombination and disappearance of the carriers are few. The carriers reach the electrodes 13 efficiently and are taken out as a current. |
