| 摘要 |
PURPOSE:To make compensation of proximity effect in a projection process possible, by providing a foreign matter ion implantation region in the edge portion of the aperture region of a metal layer on a substrate surface in image transfer utilizing photo electron. CONSTITUTION:A mask 2 is formed by laminating the following two layers; a metal layer 12 being patternized on the substrate 11 of a semiconductor possesing the photoelectric effect, and a thin film 13 for photo electron emission which is composed of alkali metals or their compound. Foreign matter ion implantation region 15 is formed along the portion of a narrow gap. Proximity effect occurs between this portion and an aperture region 2b at the edge part of an aperture region 12a on the metal layer 12 being patternized. After the metal layer 12 is formed on a substrate 11, that is, before the thin film 13 is not coated, the region 15 is formed by ion implantation into the substrate 11 applying a converged ion beam. Thereby the intensity of photo electron omission on the portion is intentionally decreased, and the proximity effect is compensated, which makes exact image transfer possible.
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