| 摘要 |
PURPOSE:To decrease transient variation of semiconductor characteristics in the initial stage of growth, by depositing in advance a semiconductor consisting of the same elements as that in a semiconductor to be grown on a substrate on the inner wall of a reaction tube. CONSTITUTION:In order to grow a high-resistance GaAs layer 12, 14 and an N-type GaAs layer 16, a shield 7 is placed on the side of a gas introducing tube 3a. When a high-resistance A GaAs layer 13 and an N-type AlGaAs layer 15 are grown, the shield 7 is placed at the position of a susceptor. In this manner, a GaAs layer is deposited on the inner wall 1a of a reaction tube 1 during the growth of the high-resistance GaAs layer 12, while an AlGaAs layer is deposited on the inner wall 7a of the shield 7 during the growth of the high- resistance AlGaAs layer 13. Accordingly, a substrate 11 is covered with the inner wall 1a having the GaAs layer from the starting point of and during the growth of the high-resistance GaAs layer 14 and the N-type AlGaAs layer 16, and is covered with the inner wall 7a having the AlGaAs layer from the starting point of and during the growth of the N-type AlGaAs layer 15. In this manner, transient variation of the semiconductor characteristics in the initial stage of growth can be decreased substantially.
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