| 摘要 |
PURPOSE:To save the usage of Au to a large extent, by forming a polyimide resin in the shape of a truncated pyramid or a truncated cone, depositing an Au layer thereon, and providing a bump electrode. CONSTITUTION:On an Si substrate 1, an SiO2 layer 2 and a PSG layer 3 are formed. An Al wiring 4 is formed thereon. The upper part of the Al wiring is coated with a PSG layer 5, which is a protecting insulating layer. The Al wiring is connected to an Au layer 8 through a barrier film 6 at a hole part, which is provided in the PSG layer 5. The Au layer 8 is formed by electrolytic plating. Its thickness is 1-5mum. The layer 8 is extended to the top part of a polyimide truncated pyramid 7 from the connecting part with the Al. The barrier metal is utilized as the ground of Au plating. Therefore the barrier metal is present not only on the connecting part of the Al and Au, but also on the polyimide truncated pyramid. The height of the bump is 10-15mum on the PSG film. The area of the contact region at the top part is 100mum square.
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