| 摘要 |
PURPOSE:To form two wiring patterns, by forming a poly Si pattern, which surrounds two close wiring patterns from the outside, forming an SiO2 layer pattern, which is reduced by the width of wire, on the poly Si pattern, and selectively depositing tungsten on the exposed surface of poly Si at the outer surface part. CONSTITUTION:On an SiNX layer 1, a poly Si layer 2 and an SiO2 layer 3 are sequentially deposited. A resist pattern 4 is formed. The poly Si layer and the SiO2 layer are patterned in the same shape by anisotropic etching method. With the resist pattern being made to remain, side etching of the SiO2 layer is performed by using a buffer solution of fluoric acid. The photoresist is removed, and tungsten is deposited on the poly Si layer, and tungsten patterns 5 and 6 are formed. The SiO2 layer and the Si layer beneath the SiO2 layer are etched away. The width of the two tungsten pattern can be set as the remainder, which is obtained by subtracting the width of the two tungsten wirings from the width of the original photoresist pattern.
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