| 摘要 |
PURPOSE:To reduce deflects and increase the reliability of a semiconductor device, by forming an insulative layer of multilayer structure composed of a first vapor growth film, a coating film selected from a silica film or a polyimide resin film, and a second vapor growth film. CONSTITUTION:A PSG film 4, a first layer, is formed by a vapor growth method, a silica film 5 as the coating film of a second layer is formed by a spin-coating method, and an NSG film 6, i.e. a third layer, is formed by a vapor growth method. A surface step difference on the PSG film 4, i.e. the first layer, that generates between metal wiring layers 3 is filled and made flat with the silica film 5, i.e. the second layer, formed by the spin-coating, so that no cavity generates in the NSG film 6, i.e. the third layer, formed on the flat surface. The silica film 5 is sandwitched between the PSG film 4 and the NSG film 6, so the defect that the silica film is weak in mechanical stress is compensated, and cracks in the silica film can be prevented. Further, the instability that impurity, etc. contained in the silica film affect on the metal wiring layer can be prevented, because the silica film 5 does not directly contact with the metal wiring layer 3.
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