| 摘要 |
PURPOSE:To obtain three negative resistance terminal elements having sufficiently large gain, by using a resonant tunnel barrier utilizing a heterojunction between an emitter and a base, and using a potential barrier, which is formed by doping, between the base and a collector. CONSTITUTION:A substrate bias is applied between an emitter and a base so that the energy of electrons e<-> in an emitter 1 becomes just equal to a level E1 of a quantum well 3. Then the electrons e<-> in the emitter are injected in a base 5 by a resonant effect. The electrons pass the base layer in a ballistic mode, jump over a barrier 6 between the base and a collector and reach the collector 7. When the bias is increased and the energy of the electrons in the emitter do not agree with the level E1 of the well, the electrons are reflected by the region of the quantum well, the collector current is remarkably decreased and negative resistance is obtained. When a potential barrier, which is formed by doping, is used between the base and the collector, the height of the barrier can be set at an arbitrary low value. Thus the current gain can be improved. |
