| 摘要 |
PURPOSE:To obtain a compact semiconductor light emitting device, by forming a semiconductor light emitting element and a detecting element, which monitors the light emitted from the light emitting element, as a unitary body. CONSTITUTION:On an N-type GaAs substrate 21, an N-type GaAlAs crystal layer 22, a GaAlAs active layer 23, a P-type GaAlAs crystal layer 24 and a P-type GaAs crystal layer 25 are formed. An electrode 31 is formed on the bottom part of the substrate 21, and an electrode 32 is formed on the upper part of the crystal layer 25. Insulating films 26 comprising SiO2, Al2O3 and the like are formed on laser-light emitting end surfaces 41 and 42. On one end surface 41, an alphaSiGe layer 27, in which P-type impurity atoms of B are added, and an amorphous (alphaSi) layer 28, in which N-type impurity atoms of P are added, are formed. A part of the N-type alphaSi layer 28 is removed, and electrodes 29 and 30 are formed. Thus a monitor diode, which has a hetero P-N junction of the alphaSi 28 and the alphaSiGe 27, is formed as a unitary body together with a semiconductor laser element.
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