| 摘要 |
PURPOSE:To obtain an aperture whose cross-sectional form is gentle, by coating the upper surface of a body on which a hole is made with an etching-assisting layer such as SOG, and setting the etching speed of the body on which a hole is made so as to be lower as compared with the etching-assisting layer and photo resist for filling. CONSTITUTION:A PSG layer 2 is formed on an Si substrate 1 and a spin-on- glass (SOG) layer 3 is coated thereon. On the layer surface, photo resist 4 is coated, which is provided with a window 5. When RIE is applied, a penetrating hole 6 is formed in the SOG layer and the PSG layer, while the Si substrate is hardly subjected to etching. The formed hole is filled with photo resist 7, and subjected to an isotropic dry etching. The etching progresses quickly in the SOG and the photo resist, so that the PSG which neighbors their boundary surfaces is exposed in the etching atmosphere and the etching progresses also therefrom. Then the etching is interrupted and the remaining photo resist is exfoliated. Thereby, a contact hole possessing a gentle cross-sectional shape is formed.
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