| 摘要 |
PURPOSE:To prevent the decrease of alignment accuracy due to the contraction and expansion of an alignment pattern, by constituting an alignment pattern in the form wherein similar figures are arranged in a telescopic system. CONSTITUTION:An alignment pattern of mask side 1 is constituted in the form wherein three squares, namely an outside square, j-l, a middle square, e-h, and an inside square a-d are arranged in a telescopic system. A black shadowed portion between the outside square and the middle square is an opaque region, a white portion between the middle square and the inside square is a transparent region, and the whole by the inside square are an opaque region. In the similar manner, an alignment pattern of wafer side 3, is constituted in the form wherein two squares, namely an outside square, s-v, and an inside square, o-r, are arranged in a telescopic system. A shaded portion between the outside square and the inside square is a negative or positive region whose reflection index is different from other parts of the wafer. |
