| 摘要 |
PURPOSE:To facilitate working of a fine semiconductor by setting the thickness of a Ti intermediate layer to a predetermined value. CONSTITUTION:1.2mum of a thick resin layer 3, 1,000Angstrom of Ti intermediate layer 4 and silicon nitride intermediate layer 5, and 1mum of resist layer are sequentially formed on a substrate 1 on which a silicon oxide layer 2 is formed. The layers 4, 5 are formed by continuously depositing a sputter deposition material. The layer 4 is formed 10-50Angstrom thick for the purpose of absorbing in advance gas generated between the layer 3 and the layer 5 at the time of exposing the resist layer and detecting a mark. The reason why the upper limit is set to 50Angstrom is because, if 50Angstrom or thinner, Ti and the thick resin layer disposed under Ti react to form a reaction layer which is not etched by fluoric acid buffer solution, while if 50Angstrom or thicker, unreacted Ti remains, Ti film is readily etched by fluoric acid buffer solution, and 10Angstrom or the lower limit is the lower limit value capable of depositing uniformly the Ti film. The influence of generated gas can be eliminated in case of charged beam exposure with large thermal energy.
|
