Ion beam implanter control system.

摘要

A scanning ion beam implanter having a wafer support (38) to control the angle of incidence between an ion beam (14) and the wafer. The wafer support preferably bends the wafer into a segment of a cylinder. As the ion beam scans across the curved wafer surface the angle of incidence remains relatively uniform. The support also includes a structure (160, 166) for pivoting the bent wafer about a pivot axis (128). The pivoting of the wafer is synchronized with the scanning of the ion beam to compensate for scanning of the ion beam in a direction transverse to the direction compensated for by the cylindrical curvature of the wafer.