发明名称 METHOD FOR SYNTHESIZING HIGH-HARDNESS BORON NITRIDE
摘要 PURPOSE:To enable the synthesizing conditions to be variable and to stably synthesize high-hardness boron nitride by passing a gaseous mixture of gas contg. boron atom, gas contg. nitrogen atom and hydrogen through microwave nonpolarized discharge and thereafter introducing it onto the surface of a heated base plate. CONSTITUTION:A gaseous mixture of gas contg. boron atom, gas contg. nitrogen atom and hydrogen supplied from gas feeders 1, 2 is introduced into a reaction chamber 5. This gaseous mixture is passed through microwave electrodeless discharge generated by a microwave oscillator 4, and gases are made to an excited or atomic state. The gaseous mixture is introduced onto the surface of a base plate 7 heated at 300-1,300 deg.C and both gas contg. boron atom and gas contg. nitrogen gas are pyrolytically decomposed and allowed to react with each other to deposit cubic boron nitride. This cubic boron nitride is excellent in thermal shock resistance, thermal conductivity, hardness, abrasion resistance and durability for metal of iron group at high temp.
申请公布号 JPS62205277(A) 申请公布日期 1987.09.09
申请号 JP19860045462 申请日期 1986.03.04
申请人 SUMITOMO ELECTRIC IND LTD 发明人 FUKUSHIMA KAZUHIKO;TOBIOKA MASAAKI
分类号 C23C16/34;C23C16/50;C23C16/511 主分类号 C23C16/34
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