| 摘要 |
<p>A random access memory having a trench capacitor includes: a semiconductor substrate (21); a trench (24) formed in the semiconductor substrate; an insulating layer (41) formed on an inner surface of the trench and having a bottom opening; a first conductive layer (25) formed at the bottom opening position and on the insulating layer (41), the first conductive layer being ohmically connected to the semiconductor substrate (21) at the bottom opening. The device further includes a dielectric layer (26) formed on the first conductive layer (25) and a second conductive layer (27) formed on the dielectric layer so as to fill the trench (24); the first conductive layer (25), the dielectric layer (26), and the second conductive layer (27) constituting a charge storage capacitor (SC); and a MIS transistor (TR) formed in the semiconductor substrate, wherein the second conductive layer (27) is ohmically connected to a source or drain region (29A, 29B) of the MIS transistor (TR). </p> |
