PLASMA DEVICE

摘要

PURPOSE:To form a good-quality film with simple constitution by disposing a substrate into a plasma chamber by a microwave and magnetic field and making the intensity distribution of the magnetic field low near the substrate and high in the position apart from the substrate. CONSTITUTION:The substrate 2 is disposed via a substrate holder 3 into the plasma chamber 1 in which plasma is induced by the microwave and magnetic field. A gas for CVD is then introduced into the chamber. The above-mentioned magnetic field is impressed approximately parallel with the substrate 2 by hole pieces 8 disposed on the outside of the plasma chamber 1. The intensity distribution thereof is made low near the substrate 2 and high in the position apart therefrom. The direction contact of the plasma with the substrate 2 is thereby obviated and the ions and free radicals are transported to the substrate 2, by which the dense and good-quality film is formed. The intensity of the magnetic field in the position apart from the substrate 2 in the above-mentioned method is preferably adjusted to the intensity at which electron cyclotron resonance arises or above at least at one point to efficiently generate the ions and free radicals.