发明名称 PROCESS FOR FORMING PATTERN
摘要 PURPOSE:To obtain satisfactory definition by forming a lower layer comprising a resist layer of a material which is insoluble in the solvent for an upper resist layer. CONSTITUTION:A resist layer 2 as an a lower layer is formed by coating polydiaryl orthophthalate type resist on the surface of a substrate 1 to be processed, and the resist layer 2 is solidified by irradiating with far ultraviolet rays 3. Then, a resist layer 4 as an upper layer using methyl isobutyl ketone as solvent is formed on the resist layer 2. As the result, the layer 2 and the layer 4 are not mixed with each other, and easily removable two layered pattern is formed.
申请公布号 JPS62205332(A) 申请公布日期 1987.09.09
申请号 JP19860049032 申请日期 1986.03.06
申请人 FUJITSU LTD 发明人 YODA SEIICHI;SANO KATSUYA;ISHIWARI HIDETOSHI
分类号 G03F7/038;G03C1/00;G03C5/16;G03F7/095;G03F7/20;G03F7/26;H01L21/027;H01L21/30 主分类号 G03F7/038
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