| 摘要 |
PURPOSE:To improve an electromigration resistance by hundred times or more by forming wirings after contact photoetching by means of a laminate structure of a metal silicide or metal nitride layer and a wiring metal to stabilize a contact resistance and to prevent junction spikes. CONSTITUTION:After an element isolating oxide film 2 is formed on a substrate 1, with a gate film 3 and an electrode made of polysilicon 4 as masks a low density diffused layer 5 is formed. Then, a sidewall oxide film 6 is formed at a gate end, a Ti film is deposited on the entire surface, lamp-annealed, and selectively etched to form TiSi2 layer 7 only on source, gate and drain. High density ions are implanted into the layer 7, an interlayer insulating film 9 is deposited, then annealed in a short time to form a diffused layer 8 under the layer 7. After contact photoetching, a laminated film of a TiN layer, AL-Bi layer, TiNAL-Si layer is formed, and the laminated film is photoetched to complete the titled device.
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