| 摘要 |
PURPOSE:To eliminate the adherence of dust and an exposure gradation by forming a crystal defect on the back surface of a semiconductor silicon wafer, adhering an amorphous silicon on the back surface having the crystal defect, and mirror-polishing the amorphous silicon to eliminate the uneven back surface of the wafer. CONSTITUTION:A semiconductor silicon wafer 1 is back-damaged to roughen the back surface to form an amorphous silicon 3 of 2-15mum. After the silicon 3 is formed, the polysilicon face of the back surface is mirror-polished. To provide similar effect, polycrystalline silicon, Si3N4 film, SiO2 or other conductor, semiconductor, insulator can be irrespectively used, and similar effect can be expected even in the formation of a multilayer of 2 or more layers of the above material by matching to the formation of an element on the front surface. Since the back surface is mirror-polished so that dusts, contaminants are hardly adhered, dusts adhered or generated in the step or manufacturing an LSI can be reduced by 20-90% to contribute to the improvement in the yield of the LSI proceeded in its miniaturization.
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