| 摘要 |
PURPOSE:To prevent the leak of carriers by increasing the layer thickness of a P-type InP layer. CONSTITUTION:The thickness on the central parts of the recessed parts 14 of a P-type InP layer 15 is made to be 0.7mum or more. Thereby, the so-called leakage current to be flowed to parts other than an active layer luminous part 20 is decreased and the improvement of the external differential quantum efficiency is made possible. This is mainly for the reason that there is an effect of decreasing the ratio of electrons to recombine in an epitaxially grown layer 18 through an epitaxially grown layer 11, the epitaxially grown layer 15 and epitaxially grown layers 16 and 17 from an N-type substrate 10 by increasing the layer thickness of the P-type InP layer 15.
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