Reduction-reoxidation type semiconductor ceramic capacitor and method of manufacturing thereof.

摘要

A reduction-reoxidation type semiconductor ceramic capacitor according to the first invention includes: semiconductor ceramic (11); a reoxidated dielectric layer (12) formed on the surface of the semiconductor ceramic (11); (by a heat treatment at a temperature from between 950° to 1200°C) at least a pair of electrodes (13, 14) formed on the reoxidated dielectric layer (12); one of the electrodes (14) being formed with an electrical conductor containing one kind or more of metals or metal compounds selected from Zn, Al, Ni, and Sn; one kind or more of metals in extremely small quantities selected from the metals being diffused into the interior of a portion, in contact with said electrode (14), of the reoxidated dielectric layer by baking said electrode at a temperature from between 600-850°C.