| 摘要 |
PURPOSE:To obtain the semiconductor device having both excellent strength and a window with which sufficient ultraviolet rays and the like can be made to irradiate on a semiconductor element by a method wherein the opposing parts in width direction of a circular irradiation window is cut off in parallel with each other. CONSTITUTION:A plurality of external leads 12 are extended from the opposing surfaces in longitudinal direction of a semiconductor device 10, and a semiconductor element 14 is provided inside the semiconductor device. The longitudinal direction of a window 16, to be used for irradiation of ultraviolet rays, is formed in arc shape and its width direction is formed almost in parallel with each other. The circle 20 having the radiis (r) with the point (O) as the center point in the irradiation is the window heretofore in use. A circle 22 having the radius (R) with the point (O) as the center point is drawn, tangent lines 11a and 11b of the circle 20 in parallel with side faces 10a and 10b are drawn on the circle 22, and the area surrounded by the tangent lines 11a and 11b is used as the irradiation window 16. Accordingly, said irradiation window 16 is formed longer by 2(R-r) in longitudinal direction when compared with the window heretofore in use, but its width is same as that used before.
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